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HAT3004R
Silicon N Channel / P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
78 DD
87 65 1234
2
4
G
G
S1 Nch
56 DD
S3 Pch
REJ03G1196-1100 (Previous: ADE-208-500I)
Rev.11.00 Sep 07, 2005
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
Rev.11.00 Sep 07, 2005 page 1 of 10
HAT3004R
Absolute Maximum Ratings
Item
Symbol
Value
Nch
Pch
Drain to source voltage Gate to source voltage
VDSS VGSS
30
–30
±20
±20
Drain current Drain peak current
ID ID (pulse) Note 1
5.5
–3.5
44
–28
Body-drain diode reverse drain current Channel dissipation Channel dissipation
IDR Pch Note 2 Pch Note 3
5.5
–3.
HAT3004R Datasheet
