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HAT1025R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
78 DD
56 DD
87 65 1 234
2
4
G
G
S1 MOS1
S3 MOS2
REJ03G1147-1000 (Previous: ADE-208-437H)
Rev.10.00 Sep 07, 2005
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
Rev.10.00 Sep 07, 2005 page 1 of 7
HAT1025R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
–20
VGSS
±10
Drain current Drain peak current
ID ID (pulse) Note 1
–4.5 –36
Body-drain diode reverse drain current Channel dissipation Channel dissipation
IDR Pch Note 2 Pch Note 3
–4.
HAT1025R Datasheet
