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HAT1036R
Silicon P Channel Power MOS FET Power Switching
Features
• Low on-resistance RDS (on) = 11 mΩ typ
• Capable of –4 V gate drive • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65
4
G
1 234
5678 DDDD
SSS 123
REJ03G1149-0700 (Previous: ADE-208-662E)
Rev.7.00 Sep 07, 2005
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Rev.7.00 Sep 07, 2005 page 1 of 6
HAT1036R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
–30
VGSS
±20
Drain current Drain peak current
ID ID (pulse) Note 1
–12 –96
Body-drain diode reverse drain current
IDR
–12
Channel dissipation
Pch Note 2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1.
HAT1036R Datasheet
