Click to expand full text
HAT1026R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65
4
G
1 234
5678 DDDD
SSS 123
REJ03G1148-1000 (Previous: ADE-208-457H)
Rev.10.00 Sep 07, 2005
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Rev.10.00 Sep 07, 2005 page 1 of 6
HAT1026R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
–30
VGSS
±20
Drain current Drain peak current
ID ID (pulse) Note 1
–7 –56
Body-drain diode reverse drain current
IDR
–7
Channel dissipation
Pch Note 2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1.
HAT1026R Datasheet
