HAF1008L Datasheet PDF (P-Channel MOSFET) | Download Renesas HAF1008L

HAF1008L - P-Channel MOSFET

This page provides the datasheet information for the HAF1008L, a member of the HAF1008 P-Channel MOSFET family.

Datasheet Summary

Description

This FET has the over temperature shut

down capability sensing to the junction temperature.

in over temperature shut

down circuit in the gate area.

down the gate voltage in case of high junction temperature lik

Features

Logic level operation (-4 to -6 V Gate drive).
High endurance capability against to the short circuit.
Built.
in the over temperature shut.
down circuit.
Latch type shut.
down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sencing Circuit Latch Circuit Gate Shutdown Circuit S 1 2 3 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.1.00, May.13.2003, page 1 of 11 HAF1008(L), HAF1008(S) Absolute Maxi.

Datasheet Details

Part number	HAF1008L
Manufacturer	Renesas
File Size	110.85 KB
Description	P-Channel MOSFET
Datasheet	HAF1008L Datasheet
Additional preview pages of the HAF1008L datasheet.

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Full PDF Text Transcription

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HAF1008(L), HAF1008(S) Silicon P Channel MOS FET Series Power Switching REJ03G0027-0100Z Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • Logic level operation (-4 to -6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resistor Temperature Sencing Circuit Latch Circuit Gate Shutdown Circuit S 1 2 3 1 2 3 1. Gate 2.

Published: Oct 31, 2015 |