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HAF1009 - Silicon P-Channel MOSFET

Datasheet Summary

Description

This FET has the over temperature shut

down capability sensing to the junction temperature.

in over temperature shut

down circuit in the gate area.

down the gate voltage in case of high junction temperature lik

Features

  • www. DataSheet4U. com 4 4 1 1 2 3 3.
  • Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built.
  • in the over temperature shut.
  • down circuit Latch type shut.
  • down operation (Need 0 voltage recovery) www. DataSheet4U. com Outline LDPAK 2, 4 D 1 G Gate resistor Tempe.
  • rature sencing circuit Latch circuit Gate shut.
  • down circuit 2 S 3 1. Gate 2. Drain 3. Source 4. Drain.

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Datasheet preview – HAF1009

Datasheet Details

Part number HAF1009
Manufacturer Renesas Technology
File Size 178.54 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet HAF1009 Datasheet
Additional preview pages of the HAF1009 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com HAF1009(L), HAF1009(S) Silicon P Channel MOS FET Series Power Switching REJ03G0029-0100Z (Previous ADE-208-1525 (Z)) Rev.1.00 May.13.2003 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features www.DataSheet4U.com 4 4 1 1 2 3 3 • • • • Logic level operation (-4 to -6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Latch type shut–down operation (Need 0 voltage recovery) www.DataSheet4U.
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