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HAF1001 - P-Channel MOSFET

Datasheet Summary

Features

  • This FET has the over temperature shut.
  • down capability sensing to the junction temperature. This FET has the built.
  • in over temperature shut.
  • down circuit in the gate area. And this circuit operation to shut.
  • down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
  • Logic level operation (.
  • 4 to.
  • 6 V Gate drive).
  • High endurance capability against to the short circuit.

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Datasheet preview – HAF1001

Datasheet Details

Part number HAF1001
Manufacturer Hitachi Semiconductor
File Size 53.90 KB
Description P-Channel MOSFET
Datasheet download datasheet HAF1001 Datasheet
Additional preview pages of the HAF1001 datasheet.

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Full PDF Text Transcription

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HAF1001 Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability ADE-208-583 A (Z) 2nd Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
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