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HAF2026RJ - Silicon N Channel Power MOSFET Power Switching

Datasheet Summary

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Features

  • Logic level operation (5 to 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit Outline.

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Datasheet Details

Part number HAF2026RJ
Manufacturer Renesas Technology
File Size 178.52 KB
Description Silicon N Channel Power MOSFET Power Switching
Datasheet download datasheet HAF2026RJ Datasheet
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HAF2026RJ Silicon N Channel Power MOS FET Power Switching REJ03G1255-0200 Rev.2.00 Jun 02, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
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