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HAF2017S - Silicon N-Channel Power MOS FET

This page provides the datasheet information for the HAF2017S, a member of the HAF2017 Silicon N-Channel Power MOS FET family.

Datasheet Summary

Description

This FET has the over temperature shutdown capability sensing the junction temperature.

This FET has the built-in over temperature shutdown circuit in the gate area.

Features

  • Logic level operation (4 to 6 V Gate drive).
  • High endurance capability against to the short circuit.
  • Built-in the over temperature shutdown circuit.
  • Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S LDPAK(L) 4 LDPAK(S)-1 4 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Apr.13.2004, page 1 of 8 HAF2017(L), HAF2017(S) Absolute Maximum Ratin.

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Datasheet preview – HAF2017S

Datasheet Details

Part number HAF2017S
Manufacturer Renesas
File Size 121.57 KB
Description Silicon N-Channel Power MOS FET
Datasheet download datasheet HAF2017S Datasheet
Additional preview pages of the HAF2017S datasheet.

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Full PDF Text Transcription

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HAF2017(L), HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z)) Rev.2.00 Apr.13.2004 Descriptions This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
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