Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built.
in the over temperature shut.
down circuit Temperature hysteresis type. High density mounting. Outline
SOP-8
D 7 D 8
2 G
Gate resistor 8 Tmperature sencing circuit self return circuit Gate shutdown circuit
1 S D 5
5 7 6
3 1 2
4
MOS1
D 6
4 G
Gate resistor Tmperature sencing circuit self return circuit Gate shutdown circ.
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HAF2015RJ
Silicon N Channel MOS FET Series Power Switching
ADE-208-933 (Z) 1st. Edition Dec. 2000
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• • • • • Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Temperature hysteresis type. High density mounting.
HAF2015RJ Datasheet
