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H5N6001P
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg)
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1 2 3
G S
REJ03G1118-0300 (Previous: ADE-208-1425A)
Rev.3.00 Sep 07, 2005
1. Gate 2. Drain (Flange) 3. Source
Rev.3.00 Sep 07, 2005 page 1 of 6
H5N6001P
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3.
H5N6001P Datasheet
