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2SJ673 - P-Channel MOSFET

Datasheet Summary

Description

The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 18 A) RDS(on)2 = 31 mΩ MAX. (VGS =.
  • 4.0 V, ID =.
  • 18 A).
  • Low Ciss: Ciss = 4600 pF TYP.
  • Built-in gate protection diode.

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Datasheet preview – 2SJ673

Datasheet Details

Part number 2SJ673
Manufacturer Renesas
File Size 202.70 KB
Description P-Channel MOSFET
Datasheet download datasheet 2SJ673 Datasheet
Additional preview pages of the 2SJ673 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A) • Low Ciss: Ciss = 4600 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SJ673 PACKAGE Isolated TO-220 (MP-45F) (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) VDSS VGSS ID(DC) ID(pulse) PT1 −60 m20 m36 m144 32 Total Power Dissipation (TA = 25°C) PT2 2.
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