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RJK0658DPA - N-Channel MOSFET

Description

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Features

  • High speed switching.
  • Low drive current.
  • High density mounting.
  • Low on-resistance.
  • Pb-free.
  • Halogen-free Outline.

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Full PDF Text Transcription

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RJK0658DPA 60V, 25A, 11.1mΩ max. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0344EJ0300 Rev.3.00 Apr 09, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3.
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