RJK0316DSP - Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V)
Outline.
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RJK0316DSP
Silicon N Channel Power MOS FET Power Switching
REJ03G1598-0300 Rev.3.00 Oct 16, 2007
Features
• • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 mΩ typ.