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RJK03A04DPA - Silicon N Channel Power MOS FET

Description

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Features

  • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 10 V).
  • Pb-free.
  • Halogen-free.
  • Outline.

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Datasheet Details

Part number RJK03A04DPA
Manufacturer Renesas
File Size 103.67 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK03A04DPA Datasheet
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Full PDF Text Transcription

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Preliminary Datasheet RJK03A04DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0210 Power Switching Rev.2.10 May 13, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 10 V)  Pb-free  Halogen-free      Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
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