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RJK0303DPB
Silicon N Channel Power MOS FET Power Switching
REJ03G1341-0600 Rev.6.00 Apr 19, 2006
Features
• • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gate Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.
RJK0303DPB Datasheet
