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Preliminary
RJK03C2DPB
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1831-0200 Power Switching Rev.2.00
Sep 29, 2009
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.9 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free • • • • •
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 6 7 8 D D D D
5 4
4 G
3 12
1, 2, 3 4 5
Source Gate Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1.
RJK03C2DPB Datasheet
