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RJK0226DNS - Silicon N Channel Power MOS FET

Description

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Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V).
  • Pb-free.
  • Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Ava.

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Datasheet Details

Part number RJK0226DNS
Manufacturer Renesas
File Size 242.79 KB
Description Silicon N Channel Power MOS FET
Datasheet download datasheet RJK0226DNS Datasheet

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Full PDF Text Transcription

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Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110 Rev.1.10 Mar 03, 2011 Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V)  Pb-free  Halogen-free Outline Package name: 8pin HVSON(3333) 5 6 78 4 321 4 G 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2.
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