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H7N1004AB
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1579-0100 Rev.1.00 Sep 03, 2007
Features
• Low on-resistance RDS (on) =25 mΩ typ. www.DataSheet4U.com • Low drive current • Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB )
4 D
G
1. Gate 2. Drain 3. Source 4. Drain
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 ms, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.
H7N1004AB Datasheet
