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H7N1004DL, H7N1004DS
Silicon N-Channel MOSFET High-Speed Power Switching
REJ03G1482-0100 Rev.1.00 Nov 07, 2006
Features
• Low on-resistance RDS(on) = 25 mΩ typ. www.DataSheet4U.com • Low drive current • Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-2) RENESAS Package code: PRSS0004ZD-C (Package name: DPAK-(S))
D
1 2
3
G
1. Gate 2. Drain 3. Source
H7N0607DS
1 2 3 S
H7N0607DL
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
H7N1004DS Datasheet
