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H7N1005DL, H7N1005DS
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 85 mΩ typ.
• Low drive current • Capable of 4.5 V gate drive
Outline
REJ03G1736-0100 Rev.1.00
Sep 19, 2008
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4
123
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
D 4
123
G S
1. Gate 2. Drain 3. Source 4. Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω 3.
H7N1005DS Datasheet
