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H5N3008P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0539-0300 Rev.3.00 Oct 16, 2006
Features
• Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching • Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
H5N3008P Datasheet
