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H5N3007CF - N-Channel MOSFET

Features

  • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temp.

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Datasheet Details

Part number H5N3007CF
Manufacturer Renesas Technology
File Size 111.09 KB
Description N-Channel MOSFET
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www.DataSheet4U.com H5N3007CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0473-0100 Rev.1.00 Nov.11.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
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