PDS3810 - Dual N-Channel MOSFETs

Potens semiconductor

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

30V,10A, RDS(ON) =13mΩ @VGS = 10V.
Improved dv/dt capability.
Fast switching.
100% EAS Guaranteed.
Green Device Available.

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PDS3810 dual n-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDS3810
Manufacturer	Potens semiconductor
File Size	748.46 KB
Description	Dual N-Channel MOSFETs
Datasheet	PDS3810 Datasheet

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30V Dual N-Channel MOSFETs PDS3810 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.