PDS3903 - P-Channel MOSFETs

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-30V,-13A, RDS(ON) =9.5mΩ@VGS = -10V.
Fast switching.
Green Device Available.
Suit for -4.5V Gate Drive.

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PDS3903 p-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDS3903
Manufacturer	Potens semiconductor
File Size	468.29 KB
Description	P-Channel MOSFETs
Datasheet	PDS3903 Datasheet

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Full PDF Text Transcription for PDS3903 (Reference)

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30V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D SS SG G D S PDS3903 BVDSS -30V RDSON 9.5m ID -13A Features  -30V,-13A, RDS(ON) =9.5mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.