PDS3911 - P-Channel MOSFETs

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-30V,-5.5A, RDS(ON) =50mΩ@VGS = -10V.
Fast switching.
Green Device Available.
Suit for -4.5V Gate Drive.

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PDS3911 p-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDS3911
Manufacturer	Potens semiconductor
File Size	664.72 KB
Description	P-Channel MOSFETs
Datasheet	PDS3911 Datasheet

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Full PDF Text Transcription for PDS3911 (Reference)

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30V P-Channel MOSFETs PDS3911 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D SS SG G D S BVDSS -30V RDSON 50m ID -5.5A Features  -30V,-5.5A, RDS(ON) =50mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.