PDS3712 - N+P Channel MOSFETs

Potens semiconductor

General Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Key Features

Fast switching.
Green Device Available.
Suit for 4.5V Gate Drive.

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PDS3712 n+p channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDS3712
Manufacturer	Potens semiconductor
File Size	975.93 KB
Description	N+P Channel MOSFETs
Datasheet	PDS3712 Datasheet

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Full PDF Text Transcription for PDS3712 (Reference)

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30V N+P Dual Channel MOSFETs PDS3712 General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D2 D2 D1 D1 G2 G1 S2 G1 S1 D1 G2 S1 D2 2 S2 BVDSS 30V -30V RDSON 20m 50m ID 8A -5.5A Features  Fast switching  Green Device Available  Suit for 4.