PDS3807 - P-Channel MOSFETs

Potens semiconductor

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-30V,-7A, RDS(ON) =23mΩ@VGS = -10V.
Fast switching.
Green Device Available.
Suit for -4.5V Gate Drive.

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PDS3807 p-channel mosfets by Potens semiconductor - Datasheet Preview

Datasheet Details

Part number	PDS3807
Manufacturer	Potens semiconductor
File Size	719.62 KB
Description	P-Channel MOSFETs
Datasheet	PDS3807 Datasheet

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Full PDF Text Transcription for PDS3807 (Reference)

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30V P-Channel MOSFETs PDS3807 General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS -30V RDSON 23m ID -7A Features  -30V,-7A, RDS(ON) =23mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.