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Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 80 100 60 80 6 6 3 1 40 1.3 150 –55 to +150 Unit V
1.5±0.1
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1259 2SD1259A 2SD1259 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
5.08±0.
2SD1259A Datasheet
