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2SD1259 - Silicon NPN Transistor

Features

  • Satisfactory linearity of forward current transfer ratio hFE. +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1259 2SD1259A Collector-emitter voltage 2SD1259 2SD1259A Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 VEBO IC ICP IB PC Tj Ts.

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SMD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1259;2SD1259A TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Satisfactory linearity of forward current transfer ratio hFE. +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1259 2SD1259A Collector-emitter voltage 2SD1259 2SD1259A Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 VEBO IC ICP IB PC Tj Tstg VCEO Symbol VCBO Rating 80 100 60 80 6 3 6 1 1.
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