The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SD1256
Silicon NPN epitaxial planar type
For power switching Complementary to 2SB933
10.0±0.3
8.5±0.2 6.0±0.5 3.4±0.3
Unit: mm
1.0±0.1
s Features
q q q q
1.5±0.1
1.5max.
1.1max.
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 130 80 7 10 5 40 1.3 150 –55 to +150 Unit V
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3 5.08±0.
2SD1256 Datasheet
