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PJP5N60 - 600V N-Channel Enhancement Mode MOSFET

Features

  • 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.5A.
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 D S.

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Full PDF Text Transcription

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PJP5N60 / PJF5N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.
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