Datasheet4U.com

PJP10N60 - 600V N-Channel Enhancement Mode MOSFET

PanJit Semiconductor

Features

10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A.
Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D.

📥 Download Datasheet

PJP10N60 600v n-channel enhancement mode mosfet by Pan Jit International - Datasheet Preview

Datasheet Details

Part number	PJP10N60
Manufacturer	PanJit Semiconductor
File Size	208.68 KB
Description	600V N-Channel Enhancement Mode MOSFET
Datasheet	PJP10N60 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
PJP15N65D	N-Channel MOSFETS	Potens semiconductor
PJP20N65D	N-Channel MOSFETS	Potens semiconductor

Other Datasheets by PanJit Semiconductor

Part Number	Description
PJP10N65	650V N-Channel Enhancement Mode MOSFET
PJP12N65	650V N-Channel Enhancement Mode MOSFET
PJP13N50	500V N-Channel Enhancement Mode MOSFET
PJP1N80	800V N-Channel Enhancement Mode MOSFET
PJP1NA80	800V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.

Published: Feb 26, 2011 |