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PJP1N80 - 800V N-Channel Enhancement Mode MOSFET

Features

  • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A.
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB/TO-251 TO-220AB TO -251 3 23 12 D S 1 G G 1 D 2 2 S 3 3.

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Full PDF Text Transcription

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PJP1N80 / PJU1N80 800V N-Channel Enhancement Mode MOSFET FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.
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