Datasheet4U Logo Datasheet4U.com

PJP20N65D - N-Channel MOSFETS

Description

These N-Channel enhancement mode power field effect transistors are using Super Junction technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20A,650V, RDS(ON) =0.2Ω@VGS = 10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.

📥 Download Datasheet

Datasheet Details

Part number PJP20N65D
Manufacturer Potens semiconductor
File Size 716.89 KB
Description N-Channel MOSFETS
Datasheet download datasheet PJP20N65D Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PJP24N10 100V N-Channel Enhancement Mode MOSFET Pan Jit International
PJP2N60 600V N-Channel Enhancement Mode MOSFET Pan Jit International
PJP2NA60 600V N-Channel MOSFET Pan Jit International
PJP2NA90 900V N-Channel MOSFET Pan Jit International
PJP10N60 600V N-Channel Enhancement Mode MOSFET Pan Jit International

Other Datasheets by Potens semiconductor

Part Number Description
PJP15N65D N-Channel MOSFETS

Full PDF Text Transcription

Click to expand full text
650V N-Channel MOSFETS PJP20N65D General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply TO220 Pin Configuration D G BVDSS RDSON ID 650V 0.2 20A Features  20A,650V, RDS(ON) =0.
Published: |