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PJP12N65 - 650V N-Channel Enhancement Mode MOSFET

Features

  • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A.
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1 D G 3S 12D G.

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Full PDF Text Transcription

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PJP12N65 / PJF12N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.
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