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PJP4N60 - 600V N-Channel Enhancement Mode MOSFET

Features

  • 4A , 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.0A.
  • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1 D G 3S 12D G.

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Full PDF Text Transcription

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PJP4N60 / PJF4N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 4A , 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.
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