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SFT1350 - P-Channel Power MOSFET

Datasheet Summary

Features

  • ON-resistance RDS(on)1=45mΩ(typ. ).
  • Input Capacitance Ciss=590pF(typ. ).
  • Halogen free compliance.
  • Protection diode in.
  • 4.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --40 ±.

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Datasheet Details

Part number SFT1350
Manufacturer ON Semiconductor
File Size 314.65 KB
Description P-Channel Power MOSFET
Datasheet download datasheet SFT1350 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1874A SFT1350 P-Channel Power MOSFET –40V, –19A, 59mΩ, Single TP/TP-FA http://onsemi.com Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input Capacitance Ciss=590pF(typ.) • Halogen free compliance • Protection diode in • 4.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --40 ±20 --19 --76 1.0 23 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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