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Ordering number : ENA1444B
SFT1341
Power MOSFET
–40V, 112mΩ, –10A, Single P-Channel
Features
• Low On-Resistance • Low Gate Charge • ESD Diode-Protected Gate
• High Speed Switching • Low Gate Drive Voltage • Pb-free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1%
ID IDP
Power Dissipation
Junction Temperature Storage Temperature
Tc=25°C
PD
Tj Tstg
Thermal Resistance Ratings
Parameter
Junction to Case Steady State Junction to Ambient *1 Note : *1 Insertion mounted
Symbol RθJC RθJA
Value –40 ±10 –10
–40
1.0 15 150 −55 to +150
Unit V V A
A
W W °C °C
Value 8.33 125
Unit °C/W
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SFT1341 Datasheet
