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SFT1202 - Bipolar Transistor

Datasheet Summary

Features

  • Adoption of FBET, MBIT process.
  • Low collector-to-emitter saturation voltage.
  • High allowable power dissipation.
  • Large current capacity.
  • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol VCBO VCES VCEO VEBO IC ICP IB Conditions Ratings Unit 180.

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Datasheet Details

Part number SFT1202
Manufacturer ON Semiconductor
File Size 314.88 KB
Description Bipolar Transistor
Datasheet download datasheet SFT1202 Datasheet
Additional preview pages of the SFT1202 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA1169A SFT1202 Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA http://onsemi.com Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • Adoption of FBET, MBIT process • Low collector-to-emitter saturation voltage • High allowable power dissipation • Large current capacity • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol VCBO VCES VCEO VEBO IC ICP IB Conditions Ratings Unit 180 V 180 V 150 V 7V 2A 3A 400 mA Continued on next page. Stresses exceeding Maximum Ratings may damage the device.
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