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Ordering number : ENA1624B
SFT1431
Power MOSFET
35V, 25mΩ,11A, Single N-Channel
Features
• Low On-Resistance • High Speed Switching • Low Gate Charge
• ESD Diode-Protected Gate • Pb-free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1%
ID IDP
Power Dissipation
Junction Temperature Storage Temperature
Tc=25°C
PD
Tj Tstg
Thermal Resistance Ratings
Parameter
Junction to Case Steady State Junction to Ambient *1 Note : *1 Insertion mounted
Symbol RθJC RθJA
Value 35
±20 11
44
1.0 15 150 −55 to +150
Unit V V A
A
W W °C °C
Value 8.33 125
Unit °C/W
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