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NVMFD5877NL, NVMFD5877NLWF Power MOSFET
Features
60 V, 39 mW, 17 A, Dual N−Channel, Logic Level, Dual SO8FL
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Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVMFD5877NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free and are RoHS Compliant
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RYJ−mb (Notes 1, 2, 3, 4) Power Dissipation RYJ−mb (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3, 4) Power Dissipation RqJA (Notes 1, 3) Pulsed Drain Current Tmb = 25°C Steady State Tmb = 100°C Tmb = 25°C Tmb = 100°C TA = 25°C Steady State TA = 100°C TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms IDM TJ, Tstg IS EAS PD ID PD Symbol VDSS VGS ID Value 60 "20 17 12 23
NVMFD5877NLWF Datasheet
