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NVMFD5853N, NVMFD5853NWF
MOSFET – Dual N-Channel, Dual SO-8FL
40 V, 10 mW, 53 A
Features
• Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5853NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free and Halogen−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Cur-
TC = 25°C
ID
rent RqJC
(Notes 1, 2, 3)
Steady TC = 100°C
Power Dissipation RqJC (Notes 1, 2)
State TC = 25°C
PD
TC = 100°C
53
A
37
58
W
29
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1, 2 & 3)
Steady TA = 100°C
Power Dissipation RqJA (Notes 1
NVMFD5853N Datasheet
