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NVMFD5877NL
MOSFET – Power, Dual N-Channel, Logic Level, Dual SO8FL
60 V, 39 mW, 17 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5877NLWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJ−mb (Notes 1, 2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJ−mb (Notes 1, 2, 3)
Tmb = 100°C
17
A
12
23
W
12
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1 & 3, 4)
Steady TA = 100°C
Power
NVMFD5877NL Datasheet
