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NVMFD5853NL
Power MOSFET
40 V, 10 mW, 34 A, Dual N−Channel Logic Level, Dual SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Designs • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5853NLWF − Wettable Flanks Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
"20 V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJ−mb (Notes 1, 2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State
Tmb = 25°C
PD
RYJ−mb (Notes 1, 2, 3)
Tmb = 100°C
34
A
24
24
W
12
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1, 3 & 4)
Steady TA = 100°C
NVMFD5853NL Datasheet
