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NTD85N02R
Power MOSFET, 85 A, 24 V, N-Channel DPAK/IPAK
Features
• Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Low Gate Charge to Minimize Switching Losses • Pb−Free Packages are Available
Applications
• CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS
24
V
VGS
±20
V
TA = 25°C
ID
17
A
TA = 85°C
12
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
Continuous Drain
TA = 25°C
ID
Current RqJA (Note 2)
Steady TA = 85°C
State
Power Dissipation
TA = 25°C
PD
RqJA (Note 2)
Continuous Drain
Current Rq
NTD85N02R Datasheet
