Full PDF Text Transcription for NTD110N02R-001G (Reference)
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NTD110N02R-001G. For precise diagrams, and layout, please refer to the original PDF.
DUCT SUMMARY VDS (V) rDS(on) (W) 0.0045 @ VGS = 4.5 V 20 0.006 @ VGS = 2.5 V ID (A)a 100 90 TO-252 FEATURES D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D G GDS Top View Drain Connected to Tab S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 100_C TC = 25_C TA = 25_C VDS VGS ID IDM IS PD TJ, Tstg 20 "15 100 80 200 65
NTD110N02R-001G Datasheet
