NTD5806NT4G - N-Channel MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2011/65/EU.

NTD5806NT4G n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	NTD5806NT4G
Manufacturer	VBsemi
File Size	464.03 KB
Description	N-Channel MOSFET
Datasheet	NTD5806NT4G Datasheet

Full PDF Text Transcription for NTD5806NT4G (Reference)

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NTD5806NT4G NTD5806NT4G N-Channel 4 www.VBsemi.com 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.013 at VGS = 10 V 0.018 at VGS = 4.5 V ID (A)a, e 55 45 Qg (T...

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n) () 0.013 at VGS = 10 V 0.018 at VGS = 4.5 V ID (A)a, e 55 45 Qg (Typ) 42 nC TO-252 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS D • OR-ing • Server • DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.

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