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V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N.
Channel D ID MAX 12 A.
Source.
to.
Drain Diode Recovery Time Comparable to a Discrete.
Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the DPAK Package These are Pb.
Full PDF Text Transcription for NTD12N10 (Reference)
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NTD12N10. For precise diagrams, and layout, please refer to the original PDF.
NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A • Sou...
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V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Mounting Information Provided for the DPAK Package These are Pb−Free Devices Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.
NTD12N10 Datasheet
