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NDF10N62Z, NDP10N62Z N-Channel Power MOSFET 620 V, 0.65 W
Features
• • • • •
Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant
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VDSS 620 V RDS(ON) (TYP) @ 5 A 0.65 Ω
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current RqJC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H.
NDP10N62Z Datasheet
